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https://hdl.handle.net/10356/83983
Title: | Sensitivity Enhancement of Transition Metal Dichalcogenides/Silicon Nanostructure-based Surface Plasmon Resonance Biosensor | Authors: | Ouyang, Qingling Zeng, Shuwen Jiang, Li Hong, Liying Xu, Gaixia Dinh, Xuan-Quyen Qian, Jun He, Sailing Qu, Junle Coquet, Philippe Yong, Ken-Tye |
Keywords: | biosensors two-dimensional materials |
Issue Date: | 2016 | Source: | Ouyang, Q., Zeng, S., Jiang, L., Hong, L., Xu, G., Dinh, X.-Q., et al. (2016). Sensitivity Enhancement of Transition Metal Dichalcogenides/Silicon Nanostructure-based Surface Plasmon Resonance Biosensor. Scientific Reports, 6, 28190-. | Series/Report no.: | Scientific Reports | Abstract: | In this work, we designed a sensitivity-enhanced surface plasmon resonance biosensor structure based on silicon nanosheet and two-dimensional transition metal dichalcogenides. This configuration contains six components: SF10 triangular prism, gold thin film, silicon nanosheet, two-dimensional MoS2/MoSe2/WS2/WSe2 (defined as MX2) layers, biomolecular analyte layer and sensing medium. The minimum reflectivity, sensitivity as well as the Full Width at Half Maximum of SPR curve are systematically examined by using Fresnel equations and the transfer matrix method in the visible and near infrared wavelength range (600 nm to 1024 nm). The variation of the minimum reflectivity and the change in resonance angle as the function of the number of MX2 layers are presented respectively. The results show that silicon nanosheet and MX2 layers can be served as effective light absorption medium. Under resonance conditions, the electrons in these additional dielectric layers can be transferred to the surface of gold thin film. All silicon-MX2 enhanced sensing models show much better performance than that of the conventional sensing scheme where pure Au thin film is used, the highest sensitivity can be achieved by employing 600 nm excitation light wavelength with 35 nm gold thin film and 7 nm thickness silicon nanosheet coated with monolayer WS2. | URI: | https://hdl.handle.net/10356/83983 http://hdl.handle.net/10220/41592 |
ISSN: | 2045-2322 | DOI: | 10.1038/srep28190 | Schools: | School of Electrical and Electronic Engineering | Research Centres: | CNRS International NTU THALES Research Alliances | Rights: | This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
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Sensitivity Enhancement of Transition Metal Dichalcogenides.pdf | 2.94 MB | Adobe PDF | ![]() View/Open |
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