Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/84030
Title: 0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization
Authors: Do, Anh Tuan
Lee, Zhao Chuan
Wang, Bo
Chang, Ik-Joon
Liu, Xin
Kim, Tony Tae-Hyoung
Keywords: Sensors
SRAM cells
Issue Date: 2016
Source: Do, A. T., Lee, Z. C., Wang, B., Chang, I. J., Liu, X., & Kim, T. T. H. (2016). 0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization. IEEE Journal of Solid-State Circuits, 51(6), 1487-1498.
Series/Report no.: IEEE Journal of Solid-State Circuits
Abstract: In sub/near-threshold operation, SRAMs suffer from considerable bitline swing degradation when the data pattern of a column is skewed to ‘1’ or ‘0’. The worst scenarios regarding this problem occur when the currently read SRAM cell has different data compared to the rest of the cells in the same column. In this work, we overcome this challenge by using a column-based randomization engine (CBRE). This CBRE circuit randomizes data stored to SRAM. This makes distribution of “1” and “0” in each column close to 50%, significantly increasing bitline swing. To further improve the bitline swing, we employ bitline boost biasing and dynamic bitline keeper schemes. Based on the mentioned techniques, we fabricated a 256 rows×128 columns (32Kb) 8T SRAM array in 65 nm CMOS technology. In our silicon measurement, the SRAM array shows successful 200 mV operation at room temperature, where energy consumption and access time are 1 pJ and 2.5 s, respectively.
URI: https://hdl.handle.net/10356/84030
http://hdl.handle.net/10220/41563
ISSN: 0018-9200
DOI: 10.1109/JSSC.2016.2540799
Rights: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [Article URL/DOI].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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