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Title: TiN-Mediated Multi-Level Negative Photoconductance of the ZrO2 Breakdown Path
Authors: Zhou, Yu
Kawashima, Tomohito
Ang, Diing Shenp
Keywords: High-k oxide
Negative photoconductivity
Issue Date: 2017
Source: Zhou, Y., Kawashima, T., & Ang, D. S. (2017). TiN-Mediated Multi-Level Negative Photoconductance of the ZrO2 Breakdown Path. IEEE Journal of the Electron Devices Society, 5(3), 188-192.
Series/Report no.: IEEE Journal of the Electron Devices Society
Abstract: We present new evidence that the non-volatile negative photoconductivity (NPC) response of the ZrO2 breakdown path can be suppressed or tuned to different levels by repeated application of a positive voltage-bias on the TiN electrode prior to light exposure. A negative voltage-bias does not produce such a tuning effect but can restore the NPC response suppressed by the positive voltage-bias before a re-breakdown step. In samples with a non-metal (Si) electrode, the NPC tuning effect is absent indicating that a positively biased TiN electrode is needed to produce the tuning effect. We hypothesize that a positive voltage may induce the migration of Ti ions into the vacancy sites in the breakdown path. This then prevents the photo-assisted recombination of the interstitial-vacancy defect pairs, leading to a modulated NPC response. A negative voltage-bias expels the Ti ions back to the electrode and restores the NPC response.
ISSN: 2168-6734
DOI: 10.1109/JEDS.2017.2678469
Schools: School of Electrical and Electronic Engineering 
Rights: © 2017 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See for more information.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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