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dc.contributor.authorZhou, Yuen
dc.contributor.authorKawashima, Tomohitoen
dc.contributor.authorAng, Diing Shenpen
dc.identifier.citationZhou, Y., Kawashima, T., & Ang, D. S. (2017). TiN-Mediated Multi-Level Negative Photoconductance of the ZrO2 Breakdown Path. IEEE Journal of the Electron Devices Society, 5(3), 188-192.en
dc.description.abstractWe present new evidence that the non-volatile negative photoconductivity (NPC) response of the ZrO2 breakdown path can be suppressed or tuned to different levels by repeated application of a positive voltage-bias on the TiN electrode prior to light exposure. A negative voltage-bias does not produce such a tuning effect but can restore the NPC response suppressed by the positive voltage-bias before a re-breakdown step. In samples with a non-metal (Si) electrode, the NPC tuning effect is absent indicating that a positively biased TiN electrode is needed to produce the tuning effect. We hypothesize that a positive voltage may induce the migration of Ti ions into the vacancy sites in the breakdown path. This then prevents the photo-assisted recombination of the interstitial-vacancy defect pairs, leading to a modulated NPC response. A negative voltage-bias expels the Ti ions back to the electrode and restores the NPC response.en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.format.extent5 p.en
dc.relation.ispartofseriesIEEE Journal of the Electron Devices Societyen
dc.rights© 2017 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See for more information.en
dc.subjectHigh-k oxideen
dc.subjectNegative photoconductivityen
dc.titleTiN-Mediated Multi-Level Negative Photoconductance of the ZrO2 Breakdown Pathen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.versionPublished versionen
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