Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/84047
Title: Control of Nanoplane Orientation in voBN for High Thermal Anisotropy in a Dielectric Thin Film: A New Solution for Thermal Hotspot Mitigation in Electronics
Authors: Cometto, Olivier
Samani, Majid K.
Liu, Bo
Sun, Shuangxi
Tsang, Siu Hon
Liu, Johan
Zhou, Kun
Teo, Edwin Hang Tong
Keywords: Thermal conductivity
3 omega
Issue Date: 2017
Source: Cometto, O., Samani, M. K., Liu, B., Sun, S., Tsang, S. H., Liu, J., et al. (2017). Control of Nanoplane Orientation in voBN for High Thermal Anisotropy in a Dielectric Thin Film: A New Solution for Thermal Hotspot Mitigation in Electronics. ACS Applied Materials & Interfaces, 9(8), 7456-7464.
Series/Report no.: ACS Applied Materials & Interfaces
Abstract: High anisotropic thermal materials, which allow heat to dissipate in a preferential direction, are of interest as a prospective material for electronics as an effective thermal management solution for hot spots. However, due to their preferential heat propagation in the in-plane direction, the heat spreads laterally instead of vertically. This limitation makes these materials ineffective as the density of hot spots increases. Here, we produce a new dielectric thin film material at room temperature, named vertically ordered nanocrystalline h-BN (voBN). It is produced such that its preferential thermally conductive direction is aligned in the vertical axis, which facilitates direct thermal extraction, thereby addressing the increasing challenge of thermal crosstalk. The uniqueness of voBN comes from its h-BN nanocrystals where all their basal planes are aligned in the direction normal to the substrate plane. Using the 3ω method, we show that voBN exhibits high anisotropic thermal conductivity (TC) with a 16-fold difference between through-film TC and in-plane TC (respectively 4.26 and 0.26 W·m–1·K–1). Molecular dynamics simulations also concurred with the experimental data, showing that the origin of this anisotropic behavior is due to the nature of voBN’s plane ordering. While the consistent vertical ordering provides an uninterrupted and preferred propagation path for phonons in the through-film direction, discontinuity in the lateral direction leads to a reduced in-plane TC. In addition, we also use COMSOL to simulate how the dielectric and thermal properties of voBN enable an increase in hot spot density up to 295% compared with SiO2, without any temperature increase.
URI: https://hdl.handle.net/10356/84047
http://hdl.handle.net/10220/43557
ISSN: 1944-8244
DOI: 10.1021/acsami.6b15014
Rights: © 2017 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ACS Applied Materials & Interfaces, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/acsami.6b15014].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
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