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Title: Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch
Authors: Zhang, H. Z.
Ang, Diing Shenp
Zhou, Yu
Wang, Xin Peng
Keywords: Metalloids
Issue Date: 2017
Source: Zhang, H. Z., Ang, D. S., Zhou, Y., & Wang, X. P. (2017). Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch. Applied Physics Letters, 111(4), 043501-.
Series/Report no.: Applied Physics Letters
Abstract: The narrow read-window of most complementary resistive switches proposed to-date poses a significant challenge to array level implementation, as inherent variations in the set and reset voltages result in an unacceptably small read margin. In this work, we present the asymmetrical ITO/HfOx/TiN complementary resistive switch, with a significantly enlarged positive read window of 1.6 V as compared to the much narrower window of 0.5 V of the symmetrical TiN/HfOx/TiN switch. A read margin of 1.1 V is obtained after accounting for statistical variations, representing a significant improvement over the 0.1 V margin of the symmetrical counterpart. Analyses show that the enlarged read window may be ascribed to two important attributes: (1) the stronger affinity of ITO for oxygen, which leads to a reduced positive set voltage and (2) a larger work function of the ITO, resulting in an increase in the positive reset voltage.
ISSN: 0003-6951
DOI: 10.1063/1.4995252
Rights: © 2017 American Institute of Physics (AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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