Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/84300
Title: Room-temperature fabricated thin-film transistors based on compounds with lanthanum and main family element boron
Authors: Xiao, Peng
Huang, Junhua
Dong, Ting
Xie, Jianing
Yuan, Jian
Luo, Dongxiang
Liu, Baiquan
Keywords: LaBx
Thin Film Transistors
Issue Date: 2018
Source: Xiao, P., Huang, J., Dong, T., Xie, J., Yuan, J., Luo, D., et al. (2018). Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron. Molecules, 23(6), 1373-.
Series/Report no.: Molecules
Abstract: For the first time, compounds with lanthanum from the main family element Boron (LaBx) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaBx thin film was in the crystalline state with a relatively narrow optical band gap of 2.28 eV. The atom ration of La/B was related to the working pressure during the sputtering process and the atom ration of La/B increased with the increase of the working pressure, which will result in the freer electrons in the LaBx thin film. LaBx-TFT without any intentionally annealing steps exhibited a saturation mobility of 0.44 cm2·V−1·s−1, which is a subthreshold swing (SS) of 0.26 V/decade and a Ion/Ioff ratio larger than 104. The room-temperature process is attractive for its compatibility with almost all kinds of flexible substrates and the LaBx semiconductor may be a new choice for the channel materials in TFTs.
URI: https://hdl.handle.net/10356/84300
http://hdl.handle.net/10220/45110
ISSN: 1420-3049
DOI: 10.3390/molecules23061373
Rights: © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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