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|Title:||Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires||Authors:||Salfi, J.
Lin, F. K.
Nair, S. V.
Chen, C. Y.
Sousa, C. F. d.
Ruda, H. E.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2013||Source:||Salfi, J., Stewart, C., Nair, S. V., Chen, C. Y., Yongshun, S., Rusli, E., et al. (2013). Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires. New Journal of Physics, 15, 093029-.||Series/Report no.:||New journal of physics||Abstract:||We analyze a novel antenna effect that resonantly enhances the photocurrent response of end-contacted P–i–N junction nanowire gratings, due to coupling of incident radiation into the grating's multiple-scattering electromagnetic modes. Quantitative characterization of these resonances was performed by spectral and polarization-resolved photocurrent measurements on gratings with N = 500, 200 and 100 nanowires, aided by electron beam-induced current measurements, and in excellent agreement with electromagnetic scattering theory. Despite the small scattering cross-section of each nanowire, with triangular cross-section (height 8 nm, width 6 nm), the measured quality factor of the resonances Q ≈ 10 exceeds that of the empty SiO2 cavity without degradation for gratings of as few as 100 nanowires. Photoresponse retains sinusoidal polarization anisotropy characteristic of single nanowires. We discuss strategies for improving Q and present a grating design tailoring resonant field enhancement at red, green or blue wavelengths, for three different grating periods of ℓ = 460, 400 and 320 nm.||URI:||https://hdl.handle.net/10356/84917
|DOI:||10.1088/1367-2630/15/9/093029||Rights:||© 2013 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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