Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/84919
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dc.contributor.authorSia, Choon Bengen
dc.contributor.authorOng, Beng Hweeen
dc.contributor.authorLim, Kok Mengen
dc.contributor.authorYeo, Kiat Sengen
dc.contributor.authorDo, Manh Anhen
dc.contributor.authorMa, Jianguoen
dc.contributor.authorAlam, Tariqen
dc.date.accessioned2009-08-03T01:34:55Zen
dc.date.accessioned2019-12-06T15:53:37Z-
dc.date.available2009-08-03T01:34:55Zen
dc.date.available2019-12-06T15:53:37Z-
dc.date.copyright2005en
dc.date.issued2005en
dc.identifier.citationSia, C. B., Ong, B. H., Lim, K. M., Yeo, K. S., Do, M. A., Ma, J. G., et al. (2005). Novel RF process monitoring test structure for silicon devices. IEEE Transactions on Semiconductor Manufacturing, 18(2), 246-253.en
dc.identifier.issn0894-6507en
dc.identifier.urihttps://hdl.handle.net/10356/84919-
dc.description.abstractThis paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects.en
dc.format.extent9 p.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE transactions on semiconductor manufacturingen
dc.rightsIEEE Transactions on Semiconductor Manufacturing © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.en
dc.titleNovel RF process monitoring test structure for silicon devicesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/TSM.2005.845095en
dc.description.versionPublished versionen
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