Please use this identifier to cite or link to this item:
Title: Novel RF process monitoring test structure for silicon devices
Authors: Sia, Choon Beng
Ong, Beng Hwee
Lim, Kok Meng
Yeo, Kiat Seng
Do, Manh Anh
Ma, Jianguo
Alam, Tariq
Issue Date: 2005
Source: Sia, C. B., Ong, B. H., Lim, K. M., Yeo, K. S., Do, M. A., Ma, J. G., et al. (2005). Novel RF process monitoring test structure for silicon devices. IEEE Transactions on Semiconductor Manufacturing, 18(2), 246-253.
Series/Report no.: IEEE transactions on semiconductor manufacturing
Abstract: This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects.
ISSN: 0894-6507
DOI: 10.1109/TSM.2005.845095
Rights: IEEE Transactions on Semiconductor Manufacturing © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Files in This Item:
File Description SizeFormat 
Novel RF Process Monitoring Test Structure For Silicon Devices.pdfPublished1.99 MBAdobe PDFThumbnail

Citations 20

Updated on Sep 2, 2020

Citations 20

Updated on Mar 3, 2021

Page view(s) 10

Updated on May 21, 2022

Download(s) 5

Updated on May 21, 2022

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.