Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/84920
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dc.contributor.authorOng, Vincent K. S.en
dc.contributor.authorKurniawan, Oka.en
dc.date.accessioned2009-06-23T04:15:36Zen
dc.date.accessioned2019-12-06T15:53:39Z-
dc.date.available2009-06-23T04:15:36Zen
dc.date.available2019-12-06T15:53:39Z-
dc.date.copyright2006en
dc.date.issued2006en
dc.identifier.citationKurniawan, O., & Ong, V. K. S. (2006). Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths. IEEE Transactions on Electron Devices, 53(9), 2358-2363.en
dc.identifier.issn0018-9383en
dc.identifier.urihttps://hdl.handle.net/10356/84920-
dc.identifier.urihttp://hdl.handle.net/10220/4658en
dc.description.abstractMinority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beaminduced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most used configuration, which is called the normal collector, assumes that the junction has an infinitely large junction depth. However, in planar devices, the junction depth is comparable to the diffusion lengths of the material. This paper presents a simple and yet accurate method to determine the diffusion lengths of the material from a diffused junction with any values of junction depths. The diffusion length of the material is extracted from the negative reciprocal of the slope of the EBIC profile in semi-logarithmic plot. It was found that the proposed method is able to extract the diffusion lengths accurately for any values of the junction depths and surface recombination velocities. The maximum error in using this method is about 6%.en
dc.format.extent6 p.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE transactions on electron devicesen
dc.rights© 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleDetermination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depthsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/TED.2006.880837en
dc.description.versionPublished versionen
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