Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/84937
Title: Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
Authors: Yang, Xuyong
Ma, Yanyan
Mutlugun, Evren
Zhao, Yongbiao
Leck, Kheng Swee
Tan, Swee Tiam
Demir, Hilmi Volkan
Zhang, Qinyuan
Du, Hejun
Sun, Xiao Wei
Keywords: quantum dot
light-emitting diodes
Issue Date: 2013
Source: Yang, X., Ma, Y., Mutlugun, E., Zhao, Y., Leck, K. S., Tan, S. T., et al. (2014). Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers. ACS Applied Materials and Interfaces, 6(1), 495-499.
Series/Report no.: ACS Applied Materials and Interfaces
Abstract: An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cdm-2 at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cdA-1 and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device.
URI: https://hdl.handle.net/10356/84937
http://hdl.handle.net/10220/40918
ISSN: 1944-8244
DOI: 10.1021/am404540z
Rights: © 2013 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
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