Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/84937
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dc.contributor.authorYang, Xuyongen
dc.contributor.authorMa, Yanyanen
dc.contributor.authorMutlugun, Evrenen
dc.contributor.authorZhao, Yongbiaoen
dc.contributor.authorLeck, Kheng Sweeen
dc.contributor.authorTan, Swee Tiamen
dc.contributor.authorDemir, Hilmi Volkanen
dc.contributor.authorZhang, Qinyuanen
dc.contributor.authorDu, Hejunen
dc.contributor.authorSun, Xiao Weien
dc.date.accessioned2016-07-12T07:30:31Zen
dc.date.accessioned2019-12-06T15:53:58Z-
dc.date.available2016-07-12T07:30:31Zen
dc.date.available2019-12-06T15:53:58Z-
dc.date.issued2013en
dc.identifier.citationYang, X., Ma, Y., Mutlugun, E., Zhao, Y., Leck, K. S., Tan, S. T., et al. (2014). Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers. ACS Applied Materials and Interfaces, 6(1), 495-499.en
dc.identifier.issn1944-8244en
dc.identifier.urihttps://hdl.handle.net/10356/84937-
dc.description.abstractAn efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cdm-2 at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cdA-1 and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.language.isoenen
dc.relation.ispartofseriesACS Applied Materials and Interfacesen
dc.rights© 2013 American Chemical Society.en
dc.subjectquantum doten
dc.subjectlight-emitting diodesen
dc.titleStable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layersen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.contributor.researchLUMINOUS! Centre of Excellence for Semiconductor Lighting and Displaysen
dc.identifier.doi10.1021/am404540zen
item.grantfulltextnone-
item.fulltextNo Fulltext-
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