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DC Field | Value | Language |
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dc.contributor.author | Agrawal, Manvi | en |
dc.contributor.author | Ravikiran, Lingaparthi | en |
dc.contributor.author | Dharmarasu, Nethaji | en |
dc.contributor.author | Radhakrishnan, K. | en |
dc.contributor.author | Karthikeyan, Giri Sadasivam | en |
dc.contributor.author | Zheng, Yuanjin | en |
dc.date.accessioned | 2017-02-10T05:54:29Z | en |
dc.date.accessioned | 2019-12-06T15:54:19Z | - |
dc.date.available | 2017-02-10T05:54:29Z | en |
dc.date.available | 2019-12-06T15:54:19Z | - |
dc.date.issued | 2017 | en |
dc.identifier.citation | Agrawal, M., Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Karthikeyan, G. S., & Zheng, Y. (2017). Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy. AIP Advances, 7(1), 015022-. | en |
dc.identifier.uri | https://hdl.handle.net/10356/84955 | - |
dc.description.abstract | The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V∼1)and GaN is grown under N-rich growth regime (III/V<1). The III/V ratio determines the growth mode of the layers that influences the lattice mismatch at the GaN/AlN interface. The lattice mismatch induced interfacial stress at the GaN/AlN interface relaxes by the formation of buried cracks in the structure. Additionally, the stress also relaxes by misorienting the AlN resulting in two misorientations with different tilts. Crack-free layers were obtained when AlN and GaN were grown in the N-rich growth regime (III/V<1) and metal rich growth regime (III/V≥1), respectively. AlGaN/GaN high electron mobility transistor (HEMT) heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG) properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm^2/V.s and sheet carrier density of 1×10^13 cm^−2. | en |
dc.format.extent | 11 p. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | AIP Advances | en |
dc.rights | © 2017 The Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | en |
dc.subject | Interface structure | en |
dc.subject | III-V semiconductors | en |
dc.title | Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.contributor.research | Temasek Laboratories | en |
dc.identifier.doi | 10.1063/1.4974074 | en |
dc.description.version | Published version | en |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | EEE Journal Articles TL Journal Articles |
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File | Description | Size | Format | |
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Stress evolution of GaNAlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy.pdf | 2.23 MB | Adobe PDF | View/Open |
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