Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85007
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dc.contributor.authorYang, Peihuaen
dc.contributor.authorChao, Dongliangen
dc.contributor.authorZhu, Changrongen
dc.contributor.authorXia, Xinhuien
dc.contributor.authorZhang, Yongqien
dc.contributor.authorWang, Xinglien
dc.contributor.authorSun, Pengen
dc.contributor.authorTay, Beng Kangen
dc.contributor.authorShen, Ze Xiangen
dc.contributor.authorMai, Wenjieen
dc.contributor.authorFan, Hong Jinen
dc.date.accessioned2017-01-19T06:13:05Zen
dc.date.accessioned2019-12-06T15:55:23Z-
dc.date.available2017-01-19T06:13:05Zen
dc.date.available2019-12-06T15:55:23Z-
dc.date.issued2015en
dc.identifier.citationYang, P., Chao, D., Zhu, C., Xia, X., Zhang, Y., Wang, X., et al. (2016). Ultrafast-Charging Supercapacitors Based on Corn-Like Titanium Nitride Nanostructures. Advanced Science, 3(6), 1500299-.en
dc.identifier.urihttps://hdl.handle.net/10356/85007-
dc.identifier.urihttp://hdl.handle.net/10220/42053en
dc.description.abstractUltrahigh rates realized by ALD-made TiN. The symmetric full-cell supercapacitors deliver a typical capacitance of 20.7 F cm−3 at a scan rate of 1 V s−1, and retain 4.3 F cm−3 at high rate of 100 V s−1. The devices can be charged and discharged for 20 000 cycles with negligible capacitance loss and with an ultralow self-discharge current (≈1 μA).en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.format.extent7 p.en
dc.language.isoenen
dc.relation.ispartofseriesAdvanced Scienceen
dc.rights© 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en
dc.subjectSupercapacitorsen
dc.subjectSelf-dischargeen
dc.titleUltrafast-Charging Supercapacitors Based on Corn-Like Titanium Nitride Nanostructuresen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doihttp://dx.doi.org/10.1002/advs.201500299en
dc.description.versionPublished versionen
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