Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85049
Title: Correlation between oxide trap generation and negative-bias temperature instability
Authors: Boo, A. A.
Teo, Z. Q.
Leong, K. C.
Ang, Diing Shenp
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: IEEE electron device letters
Abstract: Evidence shows that substantial interface degradation under negative-bias temperature (NBT) stressing does not result in any apparent oxide trap generation. The link between NBT instability and oxide trap generation is actually found in the recoverable hole-trapping component (R) of the former. When R is constant, independent of the number of stress/relaxation cycles, no apparent oxide trap generation is observed in spite of nonnegligible interface degradation. However, when oxide trap generation occurs, a correlated decrease of R is observed. Analysis shows that the generated oxide traps are due to a portion of the trapped holes being transformed into a more permanent form. A possible explanation based on the oxygen vacancy defect is given.
URI: https://hdl.handle.net/10356/85049
http://hdl.handle.net/10220/11335
DOI: 10.1109/LED.2012.2185481
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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