Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85052
Full metadata record
DC FieldValueLanguage
dc.contributor.authorYew, K. S.en
dc.contributor.authorBersuker, G.en
dc.contributor.authorAng, Diing Shenpen
dc.date.accessioned2013-07-12T07:46:45Zen
dc.date.accessioned2019-12-06T15:56:15Z-
dc.date.available2013-07-12T07:46:45Zen
dc.date.available2019-12-06T15:56:15Z-
dc.date.copyright2011en
dc.date.issued2011en
dc.identifier.urihttps://hdl.handle.net/10356/85052-
dc.identifier.urihttp://hdl.handle.net/10220/11337en
dc.description.abstractWe provide new insights, via nanoscale TDDB testing, into the bimodal Weibull failure distribution obtained from area scaling of high-κ (HK) gate stack. Time-to-breakdown (BD) statistics for grain boundary (GB) and grain in a polycrystalline HK gate stack are obtained individually from localized constant voltage stressing via a scanning tunneling microscope. In spite of an initial difference in the preexisting defect density, no apparent difference in the Weibull slope is observed for the two sets of BD statistics. The bimodal Weibull distribution is shown to be a combined effect: 1) The steep Weibull slope of the lower percentile, arising from large-area devices, is related to BD at GBs, and 2) the upper percentile, arising from small-area devices, is mostly related to grain BDs. In this case, the Weibull slope is reduced by a small fraction of these devices exhibiting early failures due to GB BDs. We show directly that structural defects in an HK dielectric, particularly GBs, play an important role on its BD distribution.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE electron device lettersen
dc.rights© 2011 IEEE.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleBimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopyen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doihttp://dx.doi.org/10.1109/LED.2011.2174606en
item.grantfulltextnone-
item.fulltextNo Fulltext-
Appears in Collections:EEE Journal Articles

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.