Please use this identifier to cite or link to this item:
|Title:||Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressing||Authors:||Boo, A. A.
Ang, Diing Shenp
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Series/Report no.:||IEEE transactions on electron devices||Abstract:||We present experimental evidence of a thermally activated transformation of negative-bias-temperature-stress-induced transient hole trapping at preexisting oxide traps into more permanent trapped holes in the ultrathin oxynitride gate p-MOSFET. The transformation is also shown to correlate with the generation of stress-induced leakage current, indicating that it is one of the key mechanisms of bulk trap generation. A similar observation (reported elsewhere) applies to the HfO2 gate p-MOSFET, implying that the observed hole-trap transformation is a common mechanism for bulk trap generation across different gate oxide technologies. The results further imply that preexisting oxide defects, usually deemed irrelevant to negative-bias temperature instability, have a definite role on long-term device parametric drifts.||URI:||https://hdl.handle.net/10356/85060
|ISSN:||0018-9383||DOI:||10.1109/TED.2012.2214441||Rights:||© 2012 IEEE||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
Updated on Mar 5, 2021
Updated on Mar 8, 2021
Page view(s) 20486
Updated on May 12, 2021
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.