Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85060
Title: Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressing
Authors: Boo, A. A.
Ang, Diing Shenp
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: IEEE transactions on electron devices
Abstract: We present experimental evidence of a thermally activated transformation of negative-bias-temperature-stress-induced transient hole trapping at preexisting oxide traps into more permanent trapped holes in the ultrathin oxynitride gate p-MOSFET. The transformation is also shown to correlate with the generation of stress-induced leakage current, indicating that it is one of the key mechanisms of bulk trap generation. A similar observation (reported elsewhere) applies to the HfO2 gate p-MOSFET, implying that the observed hole-trap transformation is a common mechanism for bulk trap generation across different gate oxide technologies. The results further imply that preexisting oxide defects, usually deemed irrelevant to negative-bias temperature instability, have a definite role on long-term device parametric drifts.
URI: https://hdl.handle.net/10356/85060
http://hdl.handle.net/10220/13459
ISSN: 0018-9383
DOI: 10.1109/TED.2012.2214441
Rights: © 2012 IEEE
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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