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dc.contributor.authorChow, Wai Leongen
dc.contributor.authorYu, Pengen
dc.contributor.authorLiu, Fucaien
dc.contributor.authorHong, Jinhuaen
dc.contributor.authorWang, Xinglien
dc.contributor.authorZeng, Qingshengen
dc.contributor.authorHsu, Chuang-Hanen
dc.contributor.authorZhu, Chaoen
dc.contributor.authorZhou, Jiadongen
dc.contributor.authorWang, Xiaoweien
dc.contributor.authorXia, Juanen
dc.contributor.authorYan, Jiaxuen
dc.contributor.authorChen, Yuen
dc.contributor.authorWu, Dien
dc.contributor.authorYu, Tingen
dc.contributor.authorShen, Zexiangen
dc.contributor.authorLin, Hsinen
dc.contributor.authorJin, Chuanhongen
dc.contributor.authorTay, Beng Kangen
dc.contributor.authorLiu, Zhengen
dc.identifier.citationChow, W. L., Yu, P., Liu, F., Hong, J., Wang, X., Zeng, Q., et al. (2017). High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics. Advanced Materials, 29(21), 1602969-.en
dc.description.abstractDue to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (µe (max) = 216 cm2 V−1 s−1) and on/off ratio up to 103. Hole-dominated-transport PdSe2 can be obtained by molecular doping using F4-TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.format.extent19 p.en
dc.relation.ispartofseriesAdvanced Materialsen
dc.rights© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].en
dc.subject2D materialsen
dc.subjectPalladium diselenideen
dc.titleHigh Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristicsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.researchCNRS International NTU THALES Research Alliancesen
dc.description.versionAccepted versionen
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