Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85207
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dc.contributor.authorChow, Wai Leongen
dc.contributor.authorYu, Pengen
dc.contributor.authorLiu, Fucaien
dc.contributor.authorHong, Jinhuaen
dc.contributor.authorWang, Xinglien
dc.contributor.authorZeng, Qingshengen
dc.contributor.authorHsu, Chuang-Hanen
dc.contributor.authorZhu, Chaoen
dc.contributor.authorZhou, Jiadongen
dc.contributor.authorWang, Xiaoweien
dc.contributor.authorXia, Juanen
dc.contributor.authorYan, Jiaxuen
dc.contributor.authorChen, Yuen
dc.contributor.authorWu, Dien
dc.contributor.authorYu, Tingen
dc.contributor.authorShen, Zexiangen
dc.contributor.authorLin, Hsinen
dc.contributor.authorJin, Chuanhongen
dc.contributor.authorTay, Beng Kangen
dc.contributor.authorLiu, Zhengen
dc.date.accessioned2017-09-04T04:04:23Zen
dc.date.accessioned2019-12-06T15:59:27Z-
dc.date.available2017-09-04T04:04:23Zen
dc.date.available2019-12-06T15:59:27Z-
dc.date.issued2017en
dc.identifier.citationChow, W. L., Yu, P., Liu, F., Hong, J., Wang, X., Zeng, Q., et al. (2017). High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics. Advanced Materials, 29(21), 1602969-.en
dc.identifier.issn0935-9648en
dc.identifier.urihttps://hdl.handle.net/10356/85207-
dc.description.abstractDue to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (µe (max) = 216 cm2 V−1 s−1) and on/off ratio up to 103. Hole-dominated-transport PdSe2 can be obtained by molecular doping using F4-TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.format.extent19 p.en
dc.language.isoenen
dc.relation.ispartofseriesAdvanced Materialsen
dc.rights© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adma.201602969].en
dc.subject2D materialsen
dc.subjectPalladium diselenideen
dc.titleHigh Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristicsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.researchCNRS International NTU THALES Research Alliancesen
dc.identifier.doi10.1002/adma.201602969en
dc.description.versionAccepted versionen
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item.grantfulltextopen-
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