Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85259
Title: Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures
Authors: Gan, C. L.
Tan, T. L.
Ong, R. X.
Issue Date: 2012
Source: Ong, R. X., Tan, T. L., & Gan, C. L. (2012). Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Abstract: Small area finger test structures were designed to isolate and study the physical failure analysis of Cu/low-k system. This paper aims to study the impact of field enhancement and area scaling through the comparison of dielectric breakdown lifetime of the finger test structures and conventional comb structure. It was found that the lifetime extracted from finger tests structures does not scale to comb structure by the Poisson area scaling law. Discrepancy is believed to have arisen due to the difference in field enhancement caused by the difference in shapes. Finite element modelling (FEM) simulation was performed using physical images to affirm this field enhancement effect. Finger test structure was found to suffer from a higher field enhancement compared to the comb structure, hence supporting the experimental results where extrapolation of lifetime from comb structure to small area over-estimates the lifetime.
URI: https://hdl.handle.net/10356/85259
http://hdl.handle.net/10220/12363
DOI: 10.1109/IPFA.2012.6306255
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Conference Papers

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