Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorLiu, Hongweien
dc.contributor.authorSun, Chengen
dc.contributor.authorLu, Junpengen
dc.contributor.authorZheng, Minruien
dc.contributor.authorLim, Kim Yongen
dc.contributor.authorMathews, Nripanen
dc.contributor.authorMhaisalkar, Subodh Gautamen
dc.contributor.authorTang, Sing Haien
dc.contributor.authorZhang, Xinhaien
dc.contributor.authorSow, Chorng Hauren
dc.identifier.citationLiu, H., Sun, C., Lu, J., Zheng, M., Lim, K. Y., Mathews, N., et al. (2012). Improved electrical property of Sb-doped SnO2 nanonets as measured by contact and non-contact approaches. RSC Advances, 2(25), 9590-9595.en
dc.description.abstractThis work reports the characterization of antimony doping effects on the electron transportation in SnO2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude–Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire–nanowire junction barriers.en
dc.relation.ispartofseriesRSC advancesen
dc.rights© 2012 The Royal Society of Chemistry.en
dc.titleImproved electrical property of Sb-doped SnO2 nanonets as measured by contact and non-contact approachesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen
item.fulltextNo Fulltext-
Appears in Collections:MSE Journal Articles

Google ScholarTM



Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.