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|Title:||Epitaxial BiFeO3 thin films on Si||Authors:||Droopad, R.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2004||Source:||Wang, J., Zheng, H., Ma, Z., Prasertchoung, S., Wuttig, M., Droopad, R., et al. (2004). Epitaxial BiFeO3 Thin Films on Si. Applied Physics Letters, 85(13), 2574-2576.||Series/Report no.:||Applied physics letters||Abstract:||BiFeO3 was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO3 films were grown on Si substrates with SrTiO3 as a template layer and SrRuO3 as bottom electrode. X-ray and transmission electron microscopy studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ~45μC/cm2. Retention measurement up to several days showed no decay of polarization. A piezoelectric coefficient (d33) of ~60 pm/V was observed, which is promising for applications in micro-electro-mechanical systems and actuators.||URI:||https://hdl.handle.net/10356/85279
|DOI:||10.1063/1.1799234||Rights:||© 2004 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.1799234. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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