Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85307
Title: High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser
Authors: Li, Xiang
Wang, Hong
Qiao, Zhongliang
Guo, Xin
Wang, Wanjun
Ng, Geok Ing
Zhang, Yu
Niu, Zhichuan
Tong, Cunzhu
Liu, Chongyang
Sia, Brian Jia Xu
Keywords: Semiconductor Lasers
Quantum Wells
Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Li, X., Wang, H., Qiao, Z., Guo, X., Wang, W., Sia, B. J. X., . . . Liu, C. (2019). High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser. Applied Physics Letters, 114(22), 221104-. doi:10.1063/1.5096447
Series/Report no.: Applied Physics Letters
Abstract: A monolithic two-section InGaSb/AlGaAsSb single quantum well mode-locked laser (MLL) emitting at 2 μm is demonstrated. The laser is able to lase in the continuous wave mode up to 80 °C, and passive mode locking operation with a fundamental repetition frequency of ∼18.4 GHz is observed up to 60 °C. The laser has a characteristic temperature T0 of ∼88 K near room temperature, which is only slightly affected by the absorber bias voltage (Va). One consequence of this finding is verified by the temperature-independent power ratios before lasing. The variations of the repetition frequency with gain current (Ig) and temperature (T) have also been systematically investigated. In the bias range in this work, the repetition frequency increases as a whole by more than 30 MHz when the temperature is raised from 20 to 40 °C. Frequency tuning of ∼130 and ∼60 MHz was observed at 20 and 40 °C, respectively. The results and their mechanism analysis provide guidelines for GaSb-based MLLs to better meet the application-required repetition frequencies even with the presence of an unwanted increase in temperature.
URI: https://hdl.handle.net/10356/85307
http://hdl.handle.net/10220/49198
ISSN: 0003-6951
DOI: 10.1063/1.5096447
Rights: © 2019 The Author(s). All rights reserved. This paper was published by AIP Publishing in Applied Physics Letters and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.