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Title: Highly efficient domain walls injection in perpendicular magnetic anisotropy nanowire
Authors: Zhang, Sen Fu
Gan, Wei Liang
Kwon, Jaesuk
Luo, Fei Long
Lim, Gerard Joseph
Wang, J. B.
Lew, Wen Siang
Keywords: Domain Walls
Issue Date: 2016
Source: Zhang, S. F., Gan, W. L., Kwon, J., Luo, F. L., Lim, G. J., Wang, J. B., & Lew, W. S. (2016). Highly efficient domain walls injection in perpendicular magnetic anisotropy nanowire. Scientific Reports, 6, 24804-. doi:10.1038/srep24804
Series/Report no.: Scientific Reports
Abstract: Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation – first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.
DOI: 10.1038/srep24804
Rights: © 2016 The Authors (Nature Publishing Group). This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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