Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85355
Full metadata record
DC FieldValueLanguage
dc.contributor.authorMastronardi, Lorenzoen
dc.contributor.authorBanakar, Mehdien
dc.contributor.authorKhokhar, Ali Z.en
dc.contributor.authorBernier, Nicolasen
dc.contributor.authorRobin, Ericen
dc.contributor.authorBucio, Thalía Domínguezen
dc.contributor.authorLittlejohns, Callum G.en
dc.contributor.authorGardes, Frederic Y.en
dc.contributor.authorRouviere, J.-L.en
dc.contributor.authorDansas, Hugoen
dc.contributor.authorGambacorti, Narcisoen
dc.contributor.authorMashanovich, Goran Z.en
dc.contributor.authorGardes, Frederic Y.en
dc.date.accessioned2019-05-15T03:32:42Zen
dc.date.accessioned2019-12-06T16:02:18Z-
dc.date.available2019-05-15T03:32:42Zen
dc.date.available2019-12-06T16:02:18Z-
dc.date.issued2017en
dc.identifier.citationMastronardi, L., Banakar, M., Khokhar, A. Z., Bucio, T. D., Littlejohns, C. G., Bernier, N., . . . Gardes, F. Y. (2017). SiGe bandgap tuning for high speed eam. ECS Transactions, 77(6), 59-63. doi:10.1149/07706.0059ecsten
dc.identifier.issn1938-5862en
dc.identifier.urihttps://hdl.handle.net/10356/85355-
dc.description.abstractWe report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 nm through an annealing process. The insertion loss of the material (transmission spectrum) is analysed between 1520 nm and 1600 nm. The experimental data are elaborated by implementing the Tauc Method analysis, and the material bandgap estimation is calculated. A maximum blue shift of 38 nm, with an overall reduction of Si content, suggests that the diffusion of Si in the Ge seed layer during anneal improves the homogeneity of the growth layer. The proposed technique provides a path for tailoring the operational wavelength of devices such as electro-absorption modulators, realized on an SOI platform.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent5 p.en
dc.language.isoenen
dc.relation.ispartofseriesECS Transactionsen
dc.rights© 2017 The Electrochemical Society. All rights reserved. This paper was published in ECS Transactions and is made available with permission of The Electrochemical Society.en
dc.subjectSiGeen
dc.subjectBandgapen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleSiGe bandgap tuning for high speed eamen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationSilicon Technologies Centre of Excellenceen
dc.identifier.doi10.1149/07706.0059ecsten
dc.description.versionPublished versionen
item.fulltextWith Fulltext-
item.grantfulltextopen-
Appears in Collections:EEE Journal Articles
Files in This Item:
File Description SizeFormat 
SiGe Bandgap Tuning for High Speed Eam.pdf202.75 kBAdobe PDFThumbnail
View/Open

SCOPUSTM   
Citations

4
checked on Sep 2, 2020

Page view(s)

29
checked on Sep 25, 2020

Download(s)

20
checked on Sep 25, 2020

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.