Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85853
Title: Efficient generation of an array of single silicon-vacancy defects in silicon carbide
Authors: Wang, Junfeng
Zhou, Yu
Zhang, Xiaoming
Liu, Fucai
Li, Yan
Li, Ke
Liu, Zheng
Wang, Guanzhong
Gao, Weibo
Keywords: Hybrid Quantum Systems
Semiconductor Compounds
Issue Date: 2017
Source: Wang, J., Zhou, Y., Zhang, X., Liu, F., Li, Y., Li, K., et al. (2017). Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide. Physical Review Applied, 7(6), 064021-.
Series/Report no.: Physical Review Applied
Abstract: Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single-photon emission, good photostability, and long spin-coherence time even at room temperature. As compared to diamond, which is widely used for hosting nitrogen-vacancy centers, silicon carbide has an advantage in terms of large-scale, high-quality, and low-cost growth, as well as an advanced fabrication technique in optoelectronics, leading to prospects for large-scale quantum engineering. In this paper, we report an experimental demonstration of the generation of a single-photon-emitter array through ion implantation. VSi defects are generated in predetermined locations with high generation efficiency (approximately 19%±4%). The single emitter probability reaches approximately 34%±4% when the ion-implantation dose is properly set. This method serves as a critical step in integrating single VSi defect emitters with photonic structures, which, in turn, can improve the emission and collection efficiency of VSi defects when they are used in a spin photonic quantum network. On the other hand, the defects are shallow, and they are generated about 40 nm below the surface which can serve as a critical resource in quantum-sensing applications.
URI: https://hdl.handle.net/10356/85853
http://hdl.handle.net/10220/45375
DOI: 10.1103/PhysRevApplied.7.064021
Rights: © 2017 American Physical Society (APS). This paper was published in Physical Review Applied and is made available as an electronic reprint (preprint) with permission of American Physical Society (APS). The published version is available at: [http://dx.doi.org/10.1103/PhysRevApplied.7.064021]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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