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Title: A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c
Authors: Zhu, Di
Siek, Liter
Keywords: 40 nm Standard CMOS
DRNTU::Engineering::Electrical and electronic engineering
Temperature Sensor
Issue Date: 2017
Source: Zhu, D., & Siek, L. (2018). A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c. Circuits, Systems, and Signal Processing, 37(6), 2278-2298. doi:10.1007/s00034-017-0685-4
Series/Report no.: Circuits, Systems, and Signal Processing
Abstract: This paper describes the design of a high-accuracy smart temperature sensor in the 40 nm standard CMOS process. Due to process scaling, the high threshold voltages, large leakage currents and low intrinsic gains, etc., cause the realization of conventional high performance analog circuits to become very challenging in advanced processes. In the proposed design, some new techniques have been utilized in order to overcome the obstacles due to process scaling. The sensor’s frontend is based on substrate PNP transistors, couple with a two-step zooming ADC. This temperature sensor achieves a two-point calibrated inaccuracy of ± 0.5 ◦C and a one-point trimmed inaccuracy of± 0.8 ◦C over a range of temperature from−55 to 175 ◦C. It draws 20 µA from a 1.2 V power supply and occupies an area of 0.0578 mm2.
ISSN: 0278-081X
DOI: 10.1007/s00034-017-0685-4
Schools: School of Electrical and Electronic Engineering 
Rights: © 2017 Springer Science+Business Media US. All rights reserved.This is a post-peer-review, pre-copyedit version of an article published in Circuits, Systems, and Signal Processing. The final authenticated version is available online at:
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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