Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85931
Title: Dzyaloshinskii–Moriya interaction induced domain wall depinning anomaly in ferromagnetic nanowire
Authors: Teoh, Han Kheng
Goolaup, Sarjoosing
Lew, Wen Siang
Keywords: Dzyaloshinskii–Moriya Interaction
Micromagnetism
Issue Date: 2016
Source: Teoh, H. K., Goolaup, S., & Lew, W. S. (2016). Dzyaloshinskii–Moriya interaction induced domain wall depinning anomaly in ferromagnetic nanowire. Journal of Physics D: Applied Physics, 50(1), 015004-.
Series/Report no.: Journal of Physics D: Applied Physics
Abstract: Magnetic domain wall positional manipulation is usually through the introduction of potential trap. In this work, we show that the presence of interfacial Dzyaloshinkii–Moriya interaction leads to a different static depinning field for Néel domain walls with the same handedness in a notched magnetic nanowire. The difference in static depinning field is due to the Néel domain wall spin orientation. The spin orientation leads to different torques being exerted on the localized magnetic moments. This inherently imposes a spin orientation dependent diode-like behavior for domain walls in a notched nanowire. An equation which relates the difference in static depinning field to the notch geometry is derived. Micromagnetic simulation with varying damping constant reveals the influence of damping constant on the strength of depinning anomaly.
URI: https://hdl.handle.net/10356/85931
http://hdl.handle.net/10220/43903
ISSN: 0022-3727
DOI: 10.1088/1361-6463/50/1/015004
Rights: © 2016 IOP Publishing Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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