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Title: Mid-infrared sensor based on a suspended microracetrack resonator with lateral subwavelength-grating metamaterial cladding
Authors: Mohamed Said Rouifed
Liu, Chongyang
Sia, Jiaxu
Zhou, Jin
Littlejohns, Callum George
Reed, Graham T.
Wang, Hong
Zhang, Zecen
Ng, Geok Ing
Hu, Ting
Qiu, Haodong
Guo, Xin
Wang, Wanjun
Keywords: Silicon Nanophotonics
Waveguide Devices
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Zhang, Z., Ng, G. I., Hu, T., Qiu, H., Guo, X., Wang, W., . . . Wang, H. (2018). Mid-infrared sensor based on a suspended microracetrack resonator with lateral subwavelength-grating metamaterial cladding. IEEE Photonics Journal, 10(2), 6801608-. doi:10.1109/JPHOT.2018.2809662
Series/Report no.: IEEE Photonics Journal
Abstract: A mid-infrared (MIR) biochemical sensor based on a one-time Si etching suspended microracetrack resonator with lateral subwavelength-grating metamaterial cladding is theoretically and experimentally demonstrated on a commercial 340-nm-thick-top-silicon silicon-on-insulator platform. The suspended structure offers an increased interaction area between the mode field and the chemicals under investigation, as well as good sensitivity. The one-time Si etching process also eases the fabrication. The suspended waveguide is optimized to obtain a balance between propagation loss and sensitivity. The suspended microracetrack resonator is experimentally measured at 2 μm wavelength with an extinction ratio of 12.1 dB and a full-width at half-maximum of 0.13 nm, which corresponds to a quality factor (Q factor) of 15 300. With the equivalent refractive index method and a specially developed numerical model, the sensing performance based on the waveguide structure has been simulated and analyzed. The simulation results show that the expected sensitivity of fundamental TE mode can achieve 337.5 nm/RIU. This one-time Si etching suspended microracetrack resonator shows great potential for ultrasensitive MIR optical biochemical sensing applications.
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2018.2809662
Schools: School of Electrical and Electronic Engineering 
Organisations: Silicon Technologies, Centre of Excellence
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at:
Fulltext Permission: open
Fulltext Availability: With Fulltext
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