Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/86301
Title: Tip-induced band bending on Sr/Si(100)-2×3 reconstructed surface
Authors: Du, Wenhan
Wang, Bing
Yang, Jingjing
Zhang, Keke
Zhao, Yu
Xiong, Chao
Ma, Jinxiang
Chen, Lei
Zhu, Xifang
Keywords: Vary-temperature Scanning Tunnelling Microscopy (VT-STM)
Tip-induced Band Bending
Issue Date: 2017
Source: Du, W., Wang, B., Yang, J., Zhang, K., Zhao, Y., Xiong, C., et al. (2017). Tip-induced band bending on Sr/Si(100)-2×3 reconstructed surface. AIP Advances, 7(12), 125124-.
Series/Report no.: AIP Advances
Abstract: Using Vary-temperature Scanning Tunnelling Microscopy (VT-STM), the geometric and electronic structures of technological important Sr/Si(100)-2×3 surface were investigated. Two important findings explained in this research. First, a phenomenon similar to quantum corral observed in the empty state STM image that near the bottom of the conduction band. This is aroused from the surface vacancies and phase boundary in the Sr/Si(100)-2×3 surface. And a new Sr/Si(100)-2×6 reconstructed structure coexist with Sr/Si(100)-2×3 surface has been prepared by accurately controlling the annealing temperature, both surface’s geometric structures can be described by dimer vacancy model. Second, tip-induced band bending phenomenon was observed in the Sr/Si(100)-2×3 surface at substrate temperature range from 76K to 300K. Experimental LDOS results from n and p-type silicon substrate confirms 0.3eV up the motion of the valence band minimum compare with bare Si(100)-2×1 surface. Buckled and unbuckled silicon dimer coexisting in the Sr/Si(100)-2×3 reconstructed surface contribute to the tip-induced band bending and energy band gap widen phenomenon. Which confirms that Sr atoms transfer electrons to the nearby silicon dimers, make the first layer silicon dimers kept at unbuckled state.
URI: https://hdl.handle.net/10356/86301
http://hdl.handle.net/10220/45283
ISSN: 2158-3226
DOI: 10.1063/1.4998918
Rights: © 2017 The Author(s) (published by American Institute of Physics). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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