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Title: Strain relaxation of germanium-tin (GeSn) fins
Authors: Kang, Yuye
Huang, Yi-Chiau
Lee, Kwang Hong
Bao, Shuyu
Wang, Wei
Lei, Dian
Masudy-Panah, Saeid
Dong, Yuan
Wu, Ying
Xu, Shengqiang
Tan, Chuan Seng
Gong, Xiao
Yeo, Yee-Chia
Keywords: Germanium-tin (GeSn)
Strain Relaxation
Issue Date: 2018
Source: Kang, Y., Huang, Y.-C., Lee, K. H., Bao, S., Wang, W., Lei, D., et al. (2018). Strain relaxation of germanium-tin (GeSn) fins. AIP Advances, 8(2), 025111-.
Series/Report no.: AIP Advances
Abstract: Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patterning and dry etching. The strain in the Ge1-xSnx fins having fin widths (WFin) ranging from 1 μm down to 80 nm was characterized using micro-Raman spectroscopy. Raman measurements show that the strain relaxation increases with decreasing WFin. Finite element (FE) simulation shows that the strain component in the transverse direction relaxes with decreasing WFin, while the strain component along the fin direction remains unchanged. For various Ge1-xSnx fin widths, transverse strain relaxation was further extracted using micro-Raman spectroscopy, which is consistent with the simulation results.
ISSN: 2158-3226
DOI: 10.1063/1.5012559
Rights: © 2018 The Author(s) (published by American Institute of Physics). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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