Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorJiang, Chongyunen
dc.contributor.authorXu, Weigaoen
dc.contributor.authorRasmita, Abdullahen
dc.contributor.authorHuang, Zumengen
dc.contributor.authorLi, Keen
dc.contributor.authorXiong, Qihuaen
dc.contributor.authorGao, Wei-boen
dc.identifier.citationJiang, C., Xu, W., Rasmita, A., Huang, Z., Li, K., Xiong, Q., & Gao, W. (2018). Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures. Nature Communications, 9(1), 753-. doi: 10.1038/s41467-018-03174-3en
dc.description.abstractTransition metal dichalcogenides have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that it is around picosecond in monolayer excitons, nanosecond for local excitons and tens of nanosecond for interlayer excitons. Here we show that the dark excitons in two-dimensional heterostructures provide a microsecond valley polarization memory thanks to the magnetic field induced suppression of valley mixing. The lifetime of the dark excitons shows magnetic field and temperature dependence. The long lifetime and valley polarization lifetime of the dark exciton in two-dimensional heterostructures make them promising for long-distance exciton transport and macroscopic quantum state generations.en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent8 p.en
dc.relation.ispartofseriesNature Communicationsen
dc.rights© 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit
dc.titleMicrosecond dark-exciton valley polarization memory in two-dimensional heterostructuresen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.contributor.organizationMajuLab, CNRS-UCA-SU-NUS-NTU International Joint Research Unit UMI 3654en
dc.contributor.researchThe Photonics Instituteen
dc.contributor.researchCentre for Disruptive Photonic Technologiesen
dc.contributor.researchNanoelectronics Center of Excellenceen
dc.description.versionPublished versionen
item.fulltextWith Fulltext-
Appears in Collections:SPMS Journal Articles
Files in This Item:
File Description SizeFormat 
Microsecond dark-exciton valley polarization.pdf1.47 MBAdobe PDFThumbnail

Citations 20

Updated on Sep 5, 2020

Citations 50

Updated on Nov 18, 2020

Page view(s) 50

Updated on Nov 24, 2020

Download(s) 50

Updated on Nov 24, 2020

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.