Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/86532
Title: Preparation of Single-Layer MoS2xSe2(1-x) and MoxW1-xS2 Nanosheets with High-Concentration Metallic 1T Phase
Authors: Tan, Chaoliang
Zhao, Wei
Chaturvedi, Apoorva
Fei, Zhen
Zeng, Zhiyuan
Chen, Junze
Huang, Ying
Ercius, Peter
Luo, Zhimin
Qi, Xiaoying
Chen, Bo
Lai, Zhuangchai
Li, Bing
Zhang, Xiao
Yang, Jian
Zong, Yun
Jin, Chuanhong
Zheng, Haimei
Kloc, Christian
Zhang, Hua
Keywords: MoS2xSe2(1−x)
Nanosheets
Issue Date: 2016
Source: Tan, C., Zhao, W., Chaturvedi, A., Fei, Z., Zeng, Z., Chen, J., et al. (2016). Preparation of Single-Layer MoS2xSe2(1-x) and MoxW1-xS2 Nanosheets with High-Concentration Metallic 1T Phase. Small, 12(14), 1866-1874.
Series/Report no.: Small
Abstract: The high-yield and scalable production of single-layer ternary transition metal dichalcogenide nanosheets with ≈66% of metallic 1T phase, including MoS2xSe2(1–x) and MoxW1–xS2 is achieved via electrochemical Li-intercalation and the exfoliation method. Thin film MoS2xSe2(1-x) nanosheets drop-cast on a fluorine-doped tin oxide substrate are used as an efficient electrocatalyst on the counter electrode for the tri-iodide reduction in a dye-sensitized solar cell.
URI: https://hdl.handle.net/10356/86532
http://hdl.handle.net/10220/44023
ISSN: 1613-6810
DOI: 10.1002/smll.201600014
Rights: © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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