Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/86624
Title: Optoelectronics of inverted type-I CdS/CdSe core/crown quantum ring
Authors: Bose, Sumanta
Fan, Weijun
Zhang, Dao Hua
Keywords: Metalloids
Band Structure
Issue Date: 2017
Source: Bose, S., Fan, W., & Zhang, D. H. (2017). Optoelectronics of inverted type-I CdS/CdSe core/crown quantum ring. Journal of Applied Physics, 122(16), 163102-.
Series/Report no.: Journal of Applied Physics
Abstract: Inverted type-I heterostructure core/crown quantum rings (QRs) are quantum-efficient luminophores, whose spectral characteristics are highly tunable. Here, we study the optoelectronic properties of type-I core/crown CdS/CdSe QRs in the zincblende phase—over contrasting lateral size and crown width. For this, we inspect their strain profiles, transition energies, transition matrix elements, spatial charge densities, electronic bandstructures, band-mixing probabilities, optical gain spectra, maximum optical gains, and differential optical gains. Our framework uses an effective-mass envelope function theory based on the 8-band k ⋅ p method employing the valence force field model for calculating the atomic strain distributions. The gain calculations are based on the density-matrix equation and take into consideration the excitonic effects with intraband scattering. Variations in the QR lateral size and relative widths of core and crown (ergo the composition) affect their energy levels, band-mixing probabilities, optical transition matrix elements, emission wavelengths/intensities, etc. The optical gain of QRs is also strongly dimension and composition dependent with further dependency on the injection carrier density causing the band-filling effect. They also affect the maximum and differential gain at varying dimensions and compositions.
URI: https://hdl.handle.net/10356/86624
http://hdl.handle.net/10220/44192
ISSN: 0021-8979
DOI: 10.1063/1.4986638
Rights: © 2017 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4986638]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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