Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/86633
Title: White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits
Authors: Ang, Diing Shenp
Kawashima, Tomohito
Zhou, Yu
Yew, Kwang Sing
Bera, Milan Kumar
Zhang, Haizhong
Keywords: Percolation Path
Oxide
Issue Date: 2015
Source: Ang, D. S., Kawashima, T., Zhou, Y., Yew, K. S., Bera, M. K., & Zhang, H. (2015). White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits. ECS Transactions, 69(5), 169-181.
Series/Report no.: ECS Transactions
Abstract: The formation of nanoscale percolation paths or conducting filaments in oxide materials such as SiO2, HfO2, etc. presents both a challenge to gate oxide reliability as well as an opportunity to a next-generation resistive memory technology, as these materials have already been heavily deployed in mainstream integrated circuit manufacturing. In this paper, we present novel experimental evidence showing that electrical conduction through a nanoscale conducting filament can be disrupted upon illumination by white light. The disruption is either permanent or temporary, depending on the current which passed through the filament at the instant of its formation before the process was interrupted. The underlying mechanism is believed to involve photon-induced migration of neighboring interstitial oxygen ions, leading to their recombination with the vacancy sites which made up the conducting filament. This finding suggests possible exploitation for gate oxide reliability renewal and implementation of optical functions in SiO2 or HfO2 based devices whose functionality thus far is only limited to electrical excitation.
URI: https://hdl.handle.net/10356/86633
http://hdl.handle.net/10220/45197
ISSN: 1938-5862
DOI: 10.1149/06905.0169ecst
Rights: © 2015 The Electrochemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ECS Transactions, The Electrochemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1149/06905.0169ecst].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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