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Title: Restoration of postbreakdown gate oxide by white-light illumination
Authors: Kawashima, Tomohito
Yew, Kwang Sing
Zhou, Yu
Ang, Diing Shenp
Bera, Milan Kumar
Zhang, Haizhong
Keywords: CMOS Memory
Gate Oxide Breakdown
Issue Date: 2015
Source: Kawashima, T., Yew, K. S., Zhou, Y., Ang, D. S., Bera, M. K., & Zhang, H. Z. (2015). Restoration of Postbreakdown Gate Oxide by White-Light Illumination. IEEE Electron Device Letters, 36(8), 748-750.
Series/Report no.: IEEE Electron Device Letters
Abstract: From conductive-atomic-force-microscope probe measurement, we show that electrical conduction through a nanoscale percolation path in the MOSFET gate oxide can be disrupted, either completely or partially, by white-light illumination. This phenomenon is consistently observed in the SiO2 and HfO2 gate-oxide materials, and thus is believed to have originated from a common mechanism-light-stimulated oxygen migration and recombination with vacancy sites that constitute the percolation path. The finding points to the prospect of reliability rejuvenation by the light-assisted restoration of postelectrical-breakdown gate oxides, as well as light-enabled memory operation based on logic MOSFET devices.
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2445788
Rights: © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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