Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/86846
Title: Resistive switching in p-type nickel oxide/n-type indium gallium zinc oxide thin film heterojunction structure
Authors: Li, Huakai
Chen, Tupei
Hu, Shaogang
Lee, W. L.
Liu, Yonghong
Zhang, Qing
Lee, Pooi See
Wang, Xinpeng
Li, Haiyang
Lo, Guoqiang
Keywords: Heterojunction
Multibit Storage
Issue Date: 2016
Source: Li, H., Chen, T., Hu, S., Lee, W. L., Liu, Y., Zhang, Q., et al. (2016). Resistive switching in p-type nickel oxide/n-type indium gallium zinc oxide thin film heterojunction structure. ECS Journal of Solid State Science and Technology, 5(9), Q239-Q243.
Series/Report no.: ECS Journal of Solid State Science and Technology
Abstract: We report a p-type nickel oxide/n-type indium gallium zinc oxide (p-NiO/n-IGZO) thin film heterojunction structure for resistive switching memory application. The as-fabricated structure exhibits the normal p-n junction behaviors with good rectification characteristic. The structure is turned into a bipolar resistive switching memory by a forming process in which the p-n junction is reversely biased. The device shows good memory performances; and it has the capability of multibit storage, which can be realized by controlling the compliance current or reset stop voltage during the switching operation. The mechanisms for both the forming process and bipolar resistive switching are discussed; and the current conduction at the low- and high-resistance states are examined in terms of temperature dependence of the current-voltage characteristic of the structure.
URI: https://hdl.handle.net/10356/86846
http://hdl.handle.net/10220/45207
ISSN: 2162-8769
DOI: 10.1149/2.0331609jss
Rights: © 2016 The Electrochemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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