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DC Field | Value | Language |
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dc.contributor.author | Boo, Ann Ann | en |
dc.contributor.author | Tung, Zhi Yan | en |
dc.contributor.author | Ang, Diing Shenp | en |
dc.date.accessioned | 2018-07-24T03:00:12Z | en |
dc.date.accessioned | 2019-12-06T16:30:07Z | - |
dc.date.available | 2018-07-24T03:00:12Z | en |
dc.date.available | 2019-12-06T16:30:07Z | - |
dc.date.issued | 2016 | en |
dc.identifier.citation | Boo, A. A., Tung, Z. Y., & Ang, D. S. (2016). New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing. IEEE Electron Device Letters, 37(4), 369-372. | en |
dc.identifier.issn | 0741-3106 | en |
dc.identifier.uri | https://hdl.handle.net/10356/86847 | - |
dc.description.abstract | New observations on the correlation between the recoverable-to-permanent transformation of hole trapping and the generation of stress-induced leakage current (SILC) under negative-bias temperature stressing are presented. Both effects are shown to exhibit very similar temperature dependence, activation energies, and power-law time exponents. In addition, a corner temperature (~125 °C), which marks an increase in the activation energy from the high-to-low temperature regime, is revealed in both the trapped-hole transformation and the SILC generation, further highlighting the strongly correlated behaviors of the two effects. These findings corroborate an earlier hypothesis that both phenomena share a common degradation mechanism. | en |
dc.description.sponsorship | MOE (Min. of Education, S’pore) | en |
dc.format.extent | 4 p. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | IEEE Electron Device Letters | en |
dc.rights | © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LED.2016.2531752]. | en |
dc.subject | Bias-temperature Instability | en |
dc.subject | High-k Gate Dielectric | en |
dc.title | New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.identifier.doi | 10.1109/LED.2016.2531752 | en |
dc.description.version | Accepted version | en |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | EEE Journal Articles |
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New observations on the correlation between hole trapping transformation and SILC generation under NBTI stressing.pdf | 355.3 kB | Adobe PDF | View/Open |
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