Please use this identifier to cite or link to this item:
|Title:||Characterisation of defects generated during constant current InGaN-on-silicon LED operation||Authors:||Made, Riko I
Syaranamual, G. J.
Sasangka, W. A.
Nguyen, Xuan Sang
Tay, Yee Yan
Herrin, Jason Scott
Thompson, C. V.
Gan, Chee Lip
|Issue Date:||2017||Source:||Made, R. I , Gao, Y., Syaranamual, G. J., Sasangka, W. A., Zhang, L., Nguyen, X. S., et al. (2017). Characterisation of defects generated during constant current InGaN-on-silicon LED operation. Microelectronics Reliability, 76-77, 561-565.||Series/Report no.:||Microelectronics Reliability||Abstract:||We studied the degradation of MOCVD-grown InGaN LEDs on Si substrates under constant current stressing. Characterisations using Deep Level Transient Spectroscopy and Electron Energy Loss Spectroscopy on active areas showed that the stressing had generated defects that have trap states at 0.26 eV below the conduction band edge (Ec – 0.26 eV) and that correlated with the active area's lower nitrogen content as compared to unstressed samples. The combination of Current-Voltage, Electroluminescence, Cathodoluminescence, and device simulations indicate that an increase in the density of these defects is correlated with an increase in the non-radiative carrier recombination that causes degradation in light emission. Preventing formation of these defects will be critical for improving InGaN-on-silicon LED reliability.||URI:||https://hdl.handle.net/10356/86855
|ISSN:||0026-2714||DOI:||10.1016/j.microrel.2017.07.072||Rights:||© 2017 Elsevier Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Microelectronics Reliability, Elsevier Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.microrel.2017.07.072].||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
Files in This Item:
|Characterisation of defects generated during constant current InGaN-on-silicon LED operation.pdf||1.91 MB||Adobe PDF|
Updated on Mar 7, 2021
Updated on Mar 9, 2021
Page view(s) 50420
Updated on Jun 29, 2022
Updated on Jun 29, 2022
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.