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Title: Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures
Authors: Chen, Zuhuang
Chen, Zhanghui
Liu, Z. Q.
Holtz, M. E.
Li, C. J.
Wang, Xiao Renshaw
Lü, W. M.
Motapothula, M.
Fan, L. S.
Turcaud, J. A.
Dedon, L. R.
Frederick, C.
Xu, R. J.
Gao, R.
N’Diaye, A. T.
Arenholz, E.
Mundy, J. A.
Venkatesan, T.
Muller, D. A.
Wang, L.-W.
Liu, Jian
Martin, L. W.
Keywords: Antiferromagnetic Insulators
Critical Thickness
Issue Date: 2017
Source: Chen, Z., Chen, Z., Liu, Z. Q., Holtz, M. E., Li, C. J., Wang, X. R., et al. (2017). Electron accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures. Physical Review Letters, 119(15), 156801-.
Series/Report no.: Physical Review Letters
Abstract: Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO3. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO3, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO3 films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales.
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.119.156801
Schools: School of Electrical and Electronic Engineering 
School of Physical and Mathematical Sciences 
Rights: © 2017 American Physical Society (APS). This paper was published in Physical Review Letters and is made available as an electronic reprint (preprint) with permission of American Physical Society (APS). The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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