Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/87323
Title: Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding
Authors: Lin, Yiding
Anantha, P.
Lee, Kwang Hong
Chua, Shen Lin
Shang, Lingru
Tan, Chuan Seng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Homogeneous Direct Bonding
Hybrid Integration
Issue Date: 2015
Source: Lin, Y., Anantha, P., Lee, K. H., Chua, S. L., Shang, L., & Tan, C. S. (2016). Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding. ECS Journal of Solid State Science and Technology, 5(2), P117-P123. doi:10.1149/2.0351602jss
Series/Report no.: ECS Journal of Solid State Science and Technology
Abstract: Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the stress as observed at top InP surface, compared to that of conventional SiO2 intermediate layer. By introducing IPOCs, the thermal stress decreases with increasing IPOC spacing-to-width (S/W) ratio. Experimentally, high quality InP/Al2O3/Si direct bonding is firstly demonstrated. Seamless bonding interface is observed, along with reasonable bond shear strength of 2.57 MPa and minimal residual stress in the transferred InP layer. Efficiency of the IPOCs is then evaluated by comparing interfacial void densities of InP bonded on dimension-varied-IPOC-patterned Si. A significant void density reduction up to two orders of magnitude is observed, with a decreasing S/W ratio. An optimal S/W ratio of 2.5 is therefore proposed to compromise between the thermal stress degradation (∼10%) and outgassing efficiency improvement (∼90% void density suppression). This work is thus significant as it could provide guidelines to establish high quality hybrid-integrated optoelectronic devices for Si photonic applications.
URI: https://hdl.handle.net/10356/87323
http://hdl.handle.net/10220/48206
ISSN: 2162-8769
DOI: 10.1149/2.0351602jss
Rights: © 2015 The Electrochemical Society. All rights reserved. This paper was published in ECS Journal of Solid State Science and Technology and is made available with permission of The Electrochemical Society.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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