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Title: Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
Authors: Meng, Q. Q.
Wang, H.
Gao, B.
Liu, C. Y.
Ang, K. S.
Guo, X.
Gao, J.
Keywords: Photodetectors
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Meng, Q. Q., Wang, H., Gao, B., Liu, C. Y., Ang, K. S., Guo, X., & Gao, J. (2014). Equivalent Circuit Model for InP-based Uni-Traveling-Carrier Photodiodes with Dipole-doped Structure. Asia Communications and Photonics Conference 2014, ATh3A.22-. doi:10.1364/ACPC.2014.ATh3A.22
Abstract: An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.
DOI: 10.1364/ACPC.2014.ATh3A.22
Rights: © 2014 The Author(s) Optical Society of America(OSA). This paper was published in Asia Communications and Photonics Conference 2014 and is made available as an electronic reprint (preprint) with permission of The Author(s) Optical Society of America(OSA). The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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