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https://hdl.handle.net/10356/87770
Title: | High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes | Authors: | Meng, Qianqian Wang, Hong Liu, Chongyang Guo, Xin Gao, Jianjun Ang, Kian Siong |
Keywords: | High Speed Dipole-doped Structure |
Issue Date: | 2017 | Source: | Meng, Q., Wang, H., Liu, C., Guo, X., Gao, J., & Ang, K. S. (2017). High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes. IEEE Journal of the Electron Devices Society, 5(1), 40-44. | Series/Report no.: | IEEE Journal of the Electron Devices Society | Abstract: | In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 A/W·GHz. | URI: | https://hdl.handle.net/10356/87770 http://hdl.handle.net/10220/45511 |
ISSN: | 2168-6734 | DOI: | 10.1109/JEDS.2016.2623815 | Schools: | School of Electrical and Electronic Engineering | Research Centres: | Temasek Laboratories | Rights: | © 2016 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | TL Journal Articles |
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High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes.pdf | 567.71 kB | Adobe PDF | ![]() View/Open |
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