Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/87770
Title: High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes
Authors: Meng, Qianqian
Wang, Hong
Liu, Chongyang
Guo, Xin
Gao, Jianjun
Ang, Kian Siong
Keywords: High Speed
Dipole-doped Structure
Issue Date: 2017
Source: Meng, Q., Wang, H., Liu, C., Guo, X., Gao, J., & Ang, K. S. (2017). High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes. IEEE Journal of the Electron Devices Society, 5(1), 40-44.
Series/Report no.: IEEE Journal of the Electron Devices Society
Abstract: In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 A/W·GHz.
URI: https://hdl.handle.net/10356/87770
http://hdl.handle.net/10220/45511
ISSN: 2168-6734
DOI: 10.1109/JEDS.2016.2623815
Rights: © 2016 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:TL Journal Articles

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