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dc.contributor.authorMeng, Qianqianen
dc.contributor.authorWang, Hongen
dc.contributor.authorLiu, Chongyangen
dc.contributor.authorGuo, Xinen
dc.contributor.authorGao, Jianjunen
dc.contributor.authorAng, Kian Siongen
dc.identifier.citationMeng, Q., Wang, H., Liu, C., Guo, X., Gao, J., & Ang, K. S. (2017). High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes. IEEE Journal of the Electron Devices Society, 5(1), 40-44.en
dc.description.abstractIn this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 A/W·GHz.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent5 p.en
dc.relation.ispartofseriesIEEE Journal of the Electron Devices Societyen
dc.rights© 2016 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See for more information.en
dc.subjectHigh Speeden
dc.subjectDipole-doped Structureen
dc.titleHigh-speed and high-responsivity InP-based uni-traveling-carrier photodiodesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchTemasek Laboratoriesen
dc.description.versionPublished versionen
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