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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Meng, Qianqian | en |
dc.contributor.author | Wang, Hong | en |
dc.contributor.author | Liu, Chongyang | en |
dc.contributor.author | Guo, Xin | en |
dc.contributor.author | Gao, Jianjun | en |
dc.contributor.author | Ang, Kian Siong | en |
dc.date.accessioned | 2018-08-07T06:17:47Z | en |
dc.date.accessioned | 2019-12-06T16:49:07Z | - |
dc.date.available | 2018-08-07T06:17:47Z | en |
dc.date.available | 2019-12-06T16:49:07Z | - |
dc.date.issued | 2017 | en |
dc.identifier.citation | Meng, Q., Wang, H., Liu, C., Guo, X., Gao, J., & Ang, K. S. (2017). High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes. IEEE Journal of the Electron Devices Society, 5(1), 40-44. | en |
dc.identifier.issn | 2168-6734 | en |
dc.identifier.uri | https://hdl.handle.net/10356/87770 | - |
dc.description.abstract | In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 A/W·GHz. | en |
dc.description.sponsorship | NRF (Natl Research Foundation, S’pore) | en |
dc.format.extent | 5 p. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | IEEE Journal of the Electron Devices Society | en |
dc.rights | © 2016 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information. | en |
dc.subject | High Speed | en |
dc.subject | Dipole-doped Structure | en |
dc.title | High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.contributor.research | Temasek Laboratories | en |
dc.identifier.doi | 10.1109/JEDS.2016.2623815 | en |
dc.description.version | Published version | en |
item.grantfulltext | open | - |
item.fulltext | With Fulltext | - |
Appears in Collections: | TL Journal Articles |
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File | Description | Size | Format | |
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High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes.pdf | 567.71 kB | Adobe PDF | ![]() View/Open |
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