Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/87805
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dc.contributor.authorLiu, Chongyangen
dc.contributor.authorWang, Ruien
dc.contributor.authorWang, Hongen
dc.contributor.authorMeng, Qianqianen
dc.contributor.authorAng, Kian Siongen
dc.date.accessioned2018-12-04T09:25:26Zen
dc.date.accessioned2019-12-06T16:49:51Z-
dc.date.available2018-12-04T09:25:26Zen
dc.date.available2019-12-06T16:49:51Z-
dc.date.issued2014en
dc.identifier.citationLiu, C., Wang, R., Wang, H., Meng, Q., & Ang, K. S. (2014). Investigation of Temperature-dependent Lasing and Optical Gain Characteristics of 1.3-μm InAs Quantum Dot Laser. Asia Communications and Photonics Conference 2014, ATh3A.4-. doi:10.1364/ACPC.2014.ATh3A.4en
dc.identifier.urihttps://hdl.handle.net/10356/87805-
dc.identifier.urihttp://hdl.handle.net/10220/46806en
dc.description.abstractTemperature-dependent lasing and optical gain characteristics were investigated on the InAs quantum dot lasers up to 120 °C. The laser showed high performance and the gain bandwidth is found to be insensitive to the temperature.en
dc.format.extent3 p.en
dc.language.isoenen
dc.rights© 2014 The Author(s) Optical Society of America(OSA). This paper was published in Asia Communications and Photonics Conference 2014 and is made available as an electronic reprint (preprint) with permission of The Author(s) Optical Society of America(OSA). The published version is available at: [http://dx.doi.org/10.1364/ACPC.2014.ATh3A.4]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.subjectQuantum-Well, -Wire And -Dot Devicesen
dc.subjectSemiconductor Lasersen
dc.titleInvestigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laseren
dc.typeConference Paperen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.conferenceAsia Communications and Photonics Conference 2014en
dc.contributor.researchNanoelectronics Centre of Excellenceen
dc.contributor.researchTemasek Laboratoriesen
dc.identifier.doi10.1364/ACPC.2014.ATh3A.4en
dc.description.versionPublished versionen
item.grantfulltextopen-
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