Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/87819
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dc.contributor.authorWu, Xingen
dc.contributor.authorYu, Kaihaoen
dc.contributor.authorCha, Dongkyuen
dc.contributor.authorBosman, Michelen
dc.contributor.authorRaghavan, Nagarajanen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorLi, Kunen
dc.contributor.authorLiu, Qien
dc.contributor.authorSun, Litaoen
dc.contributor.authorPey, Kinleongen
dc.date.accessioned2018-08-07T02:49:29Zen
dc.date.accessioned2019-12-06T16:50:07Z-
dc.date.available2018-08-07T02:49:29Zen
dc.date.available2019-12-06T16:50:07Z-
dc.date.issued2018en
dc.identifier.citationWu, X., Yu, K., Cha, D., Bosman, M., Raghavan, N., Zhang, X., et al. (2018). Atomic scale modulation of self‐rectifying resistive switching by interfacial defects. Advanced Science, 5(6), 1800096-.en
dc.identifier.urihttps://hdl.handle.net/10356/87819-
dc.description.abstractHigher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni‐electrode/HfOx/SiO2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfOx/SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.en
dc.format.extent7 p.en
dc.language.isoenen
dc.relation.ispartofseriesAdvanced Scienceen
dc.rights© 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en
dc.subjectHafnium Dioxideen
dc.subjectIn Situ Transmission Electron Microscopyen
dc.titleAtomic scale modulation of self‐rectifying resistive switching by interfacial defectsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1002/advs.201800096en
dc.description.versionPublished versionen
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