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Title: Atomic scale modulation of self‐rectifying resistive switching by interfacial defects
Authors: Wu, Xing
Yu, Kaihao
Cha, Dongkyu
Bosman, Michel
Raghavan, Nagarajan
Zhang, Xixiang
Li, Kun
Liu, Qi
Sun, Litao
Pey, Kinleong
Keywords: Hafnium Dioxide
In Situ Transmission Electron Microscopy
Issue Date: 2018
Source: Wu, X., Yu, K., Cha, D., Bosman, M., Raghavan, N., Zhang, X., et al. (2018). Atomic scale modulation of self‐rectifying resistive switching by interfacial defects. Advanced Science, 5(6), 1800096-.
Series/Report no.: Advanced Science
Abstract: Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni‐electrode/HfOx/SiO2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfOx/SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.
DOI: 10.1002/advs.201800096
Rights: © 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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