Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/88219
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dc.contributor.authorAjaykumar, Arjunen
dc.contributor.authorZhou, Xingen
dc.contributor.authorChiah, Siau Behen
dc.contributor.authorSyamal, Biniten
dc.date.accessioned2018-03-26T05:41:10Zen
dc.date.accessioned2019-12-06T16:58:28Z-
dc.date.available2018-03-26T05:41:10Zen
dc.date.available2019-12-06T16:58:28Z-
dc.date.copyright2017en
dc.date.issued2017en
dc.identifier.citationAjaykumar, A., Zhou, X., Chiah, S. B., & Syamal, B. (2017). Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs. IEEE Transactions on Electron Devices, 64(4), 1702-1707.en
dc.identifier.issn0018-9383en
dc.identifier.urihttps://hdl.handle.net/10356/88219-
dc.identifier.urihttp://hdl.handle.net/10220/44615en
dc.description.abstractLow-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based noise formulation needs modification in the subthreshold regime. Based on the new formulation, many published results may require reinterpretation. The new formulation is validated with data extracted from the literature for III-V, nanowire, and high-K gate-stack-based devices.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE Transactions on Electron Devicesen
dc.rights© 2017 IEEE.en
dc.subjectCarrier Number Fluctuationen
dc.subjectHooge Mobility Fluctuationen
dc.titleImpact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/TED.2017.2670615en
dc.description.versionAccepted versionen
dc.identifier.rims203654en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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