Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/88283
Title: Tuning magnetic properties for domain wall pinning via localized metal diffusion
Authors: Jin, Tianli
Ranjbar, Mojtaba
He, S. K.
Law, Wai Cheung
Zhou, T. J.
Lew, Wensiang
Liu, X. X.
Piramanayagam, S. N.
Keywords: DRNTU::Science::Physics
Domain Wall
Localized Diffusion
Issue Date: 2017
Source: Jin, T. L., Ranjbar, M., He, S. K., Law, W. C., Zhou, T. J., Lew, W. S., ...Piramanayagam, S. N. (2017). Tuning magnetic properties for domain wall pinning via localized metal diffusion. Scientific Reports, 7(1), 16208-. doi: 10.1038/s41598-017-16335-z
Series/Report no.: Scientific Reports
Abstract: Precise control of domain wall displacement in nanowires is essential for application in domain wall based memory and logic devices. Currently, domain walls are pinned by creating topographical notches fabricated by lithography. In this paper, we propose localized diffusion of non-magnetic metal into ferromagnetic nanowires by annealing induced mixing as a non-topographical approach to form pinning sites. As a first step to prove this new approach, magnetodynamic properties of permalloy (Ni80Fe20) films coated with different capping layers such as Ta, Cr, Cu and Ru were investigated. Ferromagnetic resonance (FMR), and anisotropy magnetoresistance (AMR) measurements were carried out after annealing the samples at different temperatures (T an ). The saturation magnetization of Ni80Fe20 film decreased, and damping constant increased with T an . X-Ray photoelectron spectroscopy results confirmed increased diffusion of Cr into the middle of Ni80Fe20 layers with T an . The resistance vs magnetic field measurements on nanowires showed intriguing results.
URI: https://hdl.handle.net/10356/88283
http://hdl.handle.net/10220/45726
ISSN: 2045-2322
DOI: 10.1038/s41598-017-16335-z
Schools: School of Physical and Mathematical Sciences 
Rights: © 2017 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. Te images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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