Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/88319
Title: Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS 2
Authors: Sun, Linfeng
Zhang, Xiaoming
Liu, Fucai
Shen, Youde
Fan, Xiaofeng
Zheng, Shoujun
Thong, John T. L.
Liu, Zheng
Yang, Shengyuan A.
Yang, Hui Ying
Keywords: Vacuum
Photoluminescence
DRNTU::Science::Physics
Issue Date: 2017
Source: Sun, L., Zhang, X., Liu, F., Shen, Y., Fan, X., Zheng, S., ...Yang, H. Y. (2017). Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS2. Scientific Reports, 7(1), 16714-. doi: 10.1038/s41598-017-15577-1
Series/Report no.: Scientific Reports
Abstract: The stronger photoluminescence (PL) in chemical vapor deposition (CVD) grown monolayer MoS2 has been attributed to its high crystal quality compared with that in mechanically exfoliated (ME) crystal, which is contrary to the cognition that the ME crystal usually have better crystal quality than that of CVD grown one and it is expected with a better optical quality. In this report, the reason of abnormally strong PL spectra in CVD grown monolayer crystal is systematically investigated by studying the in-situ opto-electrical exploration at various environments for both of CVD and ME samples. High resolution transmission electron microscopy is used to investigate their crystal qualities. The stronger PL in CVD grown crystal is due to the high p-doping effect of adsorbates induced rebalance of exciton/trion emission. The first principle calculations are carried out to explore the interaction between adsorbates in ambient and defects sites in MoS2, which is consistent to the experimental phenomenon and further confirm our proposed mechanisms.
URI: https://hdl.handle.net/10356/88319
http://hdl.handle.net/10220/45728
ISSN: 2045-2322
DOI: 10.1038/s41598-017-15577-1
Schools: School of Electrical and Electronic Engineering 
School of Materials Science & Engineering 
School of Physical and Mathematical Sciences 
Research Centres: Centre for Programmable Materials 
Centre for Micro-/Nano-electronics (NOVITAS) 
Rights: © 2017 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. Te images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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